The Ammonothermal Crystal Growth of Gallium Nitride - A Technique on the Up Rise
نویسندگان
چکیده
| Gallium nitride (GaN) is one of the most important wide band gap semiconductor materials in modern technology with even higher expectations for future applications it is ought to play a crucial role. Among this, the growth of lattice and thermally matched GaN substrates for the GaN device technology takes an essential piece. This paper is reporting on the achievements in the ammonothermal growth technique of GaN bulk crystals. Important features specific to the ammonothermal technique are focused on. Although only a few groups (currently G 10 worldwide) are directly involved in the development of the ammonothermal bulk crystal growth technology, partly due to the extreme technological challenges, tremendous progress over the last decade has recently resulted in the fabrication of 2 inch large, freestanding, single crystallineGaNwith excellent structuralperfection.
منابع مشابه
Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth
متن کامل
Chemistry of Ammonothermal Synthesis
Ammonothermal synthesis is a method for synthesis and crystal growth suitable for a large range of chemically different materials, such as nitrides (e.g., GaN, AlN), amides (e.g., LiNH2, Zn(NH2)2), imides (e.g., Th(NH)2), ammoniates (e.g., Ga(NH3)3F3, [Al(NH3)6]I3 · NH3) and non-nitrogen compounds like hydroxides, hydrogen sulfides and polychalcogenides (e.g., NaOH, LiHS, CaS, Cs2Te5). In parti...
متن کاملGreen Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature
Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN NS werecharacterized by field emission scanning electron microscope (FE-SEM), transmissionelectro...
متن کاملControlled growth of gallium nitride single-crystal nanowires using a chemical vapor deposition method
Chemical vapor deposition (CVD) using gold nanoparticles as the catalyst to grow high-quality single-crystal gallium nitride nanowires was developed. This method enables control over several important aspects of the growth, including control of the nanowire diameter by using monodispersed gold clusters, control of the nanowire location via e-beam patterning of the catalyst sites, and control of...
متن کاملDelta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system
Ferromagnetic delta-phase manganese gallium with Mn:Ga ratio between 1:1 to 1.5:1 is grown on wurtzite gallium nitride and scandium nitride substrates, using molecular beam epitaxy. The dependencies of growth properties, e.g. interface formation, surface reconstruction and crystalline quality, on substrate crystallographic structure and polarity are investigated. Results suggest that for growth...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Proceedings of the IEEE
دوره 98 شماره
صفحات -
تاریخ انتشار 2010